IPB60R280P7ATMA1 vs IPD60R2K0PFD7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPB60R280P7ATMA1 dari Infineon dan IPD60R2K0PFD7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R2K0PFD7SAUMA1 - 600V CoolMOS PFD7 N-Channel MOSFET | Infineon
IPD60R2K0PFD7SAUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPB60R280P7ATMA1 | IPD60R2K0PFD7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,88 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (600 V) | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | Superjunction N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Paket | PG-TO263-3 (D2PAK) | PG-TO252-3-344 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | 3 (Gate, Drain, Source) |
| Rentang Suhu Kerja | -55 °C to +150 °C (T_j max) | -55 C to +150 C (junction) |
| Configuration | Single N-Channel | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Series | — | CoolMOS PFD7 |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) at T_C | — | 3 A |
| Power Dissipation (P_D) at T_C | — | 20 W |
| R_DS(on) at V_GS = 10 V | — | 2000 milliohm (typ) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Tingkat Sensitivitas Kekeringan (MSL) | — | MSL2 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Standard Pack Quantity | — | 2500 pcs / 13-inch reel |