IPB60R280P7ATMA1 vs IPL60R085P7AUMA1 Perbandingan
Perbandingan bersamaan detil IPB60R280P7ATMA1 dari Infineon dan IPL60R085P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB60R280P7ATMA1 | IPL60R085P7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,88 | — |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 (600 V) | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (SJ) | CoolMOS P7 superjunction (7th generation) |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 12 A | — |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | — |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | — |
| Power Dissipation P_D (T_C=25°C) | 53 W | — |
| Paket | PG-TO263-3 (D2PAK) | PG-VSON-4 (VSON-4, source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (T_j max) | — |
| Configuration | Single N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Generation | 7th Gen CoolMOS (successor to P6) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 39 A |
| Continuous Drain Current (ID, Tc=100°C) | — | 24 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 85 mΩ at VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Maximum Power Dissipation (Ptot) | — | 154 W |
| Suhu Hubung Kerja | — | -40 °C to +150 °C |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| ESD Robustness (HBM) | — | >2 kV (all pins) |
| Qualification | — | JEDEC industrial |
| Polarity | — | N-channel |