IPB60R280P7ATMA1 vs IPL60R085P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R280P7ATMA1 disebabkan oleh Infineon dan IPL60R085P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R280P7ATMA1 IPL60R085P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0.88 —
Manufacturer Infineon Technologies —
Product Family CoolMOS P7 (600 V) —
Jenis Transistor N-Channel MOSFET —
Technology Superjunction (SJ) CoolMOS P7 superjunction (7th generation)
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, T_C=25°C) 12 A —
On-Resistance R_DS(on) max (V_GS=10V) 280 mOhm —
Gate-Source Threshold V_GS(th) typ 3.5 V —
Power Dissipation P_D (T_C=25°C) 53 W —
Kemasan PG-TO263-3 (D2PAK) PG-VSON-4 (VSON-4, source-down)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (2 + Tab) —
Gambaran Suhu Operasi -55 °C to +150 °C (T_j max) —
Configuration Single N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes —
Generation 7th Gen CoolMOS (successor to P6) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 39 A
Continuous Drain Current (ID, Tc=100°C) — 24 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 85 mΩ at VGS=10 V
Gate Threshold Voltage (VGS(th)) — 3.5 V
Maximum Power Dissipation (Ptot) — 154 W
Suhu Hubungan Operasi — -40 °C to +150 °C
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
ESD Robustness (HBM) — >2 kV (all pins)
Qualification — JEDEC industrial
Polarity — N-channel

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