IPB70N10S3L12ATMA1 vs IPD90P04P405ATMA2 Perbandingan

Perbandingan bersamaan detil IPB70N10S3L12ATMA1 dari Infineon dan IPD90P04P405ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB70N10S3L12ATMA1 IPD90P04P405ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS (IPB70N10) —
Tipe Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V -40 V
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Bebas Halogen Yes —
Polarity — P-Channel
Continuous Drain Current (ID, Tc) — -90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) — 125 W
On-Resistance RDS(on) at VGS = -10 V — 4.7 mΩ (typical)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Rentang Suhu Kerja — -55 °C to +175 °C (Tj)
Paket — PG-TO252-3-313 (DPAK, surface mount)
Jumlah Pin — 3 (Gate, Drain, Source)
Process Technology — OptiMOS-P2 (trench + field plate)
Level MSL — 1 (per JEDEC J-STD-020)
Status RoHS — Compliant

Spek dan Sumber

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