IPB70N10S3L12ATMA1 vs IPD90P04P405ATMA2 比較
詳細並排比較 IPB70N10S3L12ATMA1 由 Infineon 與 IPD90P04P405ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB70N10S3L12ATMA1 - 100V 70A 11.8mΩ OptiMOS N-Ch MOSFET | Infineon
IPB70N10S3L12ATMA1 ✓ 啟用中
規格比較
| 參數 | IPB70N10S3L12ATMA1 | IPD90P04P405ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS (IPB70N10) | — |
| 電晶體類型 | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | -40 V |
| Continuous Drain Current (ID) at TC=25°C | 70 A | — |
| Peak Drain Current (IDM) | 180 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.8 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 125 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 / 外殼 | PG-TO263-3-2 (D2PAK, 2 Leads + Tab) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 Qualified | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| RoHS / Green | RoHS Compliant, Green Product | — |
| Avalanche Tested | 100 % Avalanche Tested | — |
| 無鹵素 | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| 工作溫度範圍 | — | -55 °C to +175 °C (Tj) |
| 封裝 | — | PG-TO252-3-313 (DPAK, surface mount) |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | — | Compliant |