IPC70N04S5L4R2ATMA1 vs IPC100N04S5L1R1ATMA1 Perbandingan

Perbandingan bersamaan detil IPC70N04S5L4R2ATMA1 dari Infineon dan IPC100N04S5L1R1ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPC70N04S5L4R2ATMA1 IPC100N04S5L1R1ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Paket PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-34 (SS08 leadless)
Operating Temperature (Tj) -55°C to +175°C —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) MSL1 (unlimited floor life, 260 °C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100% (60 A production test) 100% avalanche tested
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5 40 V
Tipe Transistor — N-Channel Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC — 100 A
On-Resistance RDS(on) max — 1.1 mΩ
Power Dissipation (PD) at TC — 150 W
Gate Threshold Voltage VGS(th) — Logic Level
Rentang Suhu Kerja — -55 °C to +175 °C
RoHS Compliance — Green Product (RoHS compliant)

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