IPC70N04S5L4R2ATMA1 vs IPC100N04S5L1R1ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC70N04S5L4R2ATMA1 disebabkan oleh Infineon dan IPC100N04S5L1R1ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPC70N04S5L4R2ATMA1 IPC100N04S5L1R1ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain to Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ Tc=25°C 70 A —
Power Dissipation (Pd) @ Tc=25°C 50 W —
R_DS(on) Max @ Vgs=10V 4.2 mΩ (typ) —
Gate Threshold (Vgs(th)) Logic Level (4.5 V max Rds On, Min Rds On) —
Drive Voltage (Max Rds On, Min Rds On) 4.5 V —
Kemasan PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-34 (SS08 leadless)
Operating Temperature (Tj) -55°C to +175°C —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260°C peak reflow) MSL1 (unlimited floor life, 260 °C peak reflow)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100% (60 A production test) 100% avalanche tested
Status RoHS Compliant (Green Product) —
Configuration Single with Built-in Diode —
Case Connection DRAIN —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5 40 V
Jenis Transistor — N-Channel Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC — 100 A
On-Resistance RDS(on) max — 1.1 mΩ
Power Dissipation (PD) at TC — 150 W
Gate Threshold Voltage VGS(th) — Logic Level
Gambaran Suhu Operasi — -55 °C to +175 °C
RoHS Compliance — Green Product (RoHS compliant)

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