IPD50N10S3L16ATMA1 vs IPD50N10S3L16ATMA2 Perbandingan
Perbandingan bersamaan detil IPD50N10S3L16ATMA1 dari Infineon dan IPD50N10S3L16ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon
IPD50N10S3L16ATMA1 ✓ AktifInfineon
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
IPD50N10S3L16ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD50N10S3L16ATMA1 | IPD50N10S3L16ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD50N10S3L16ATMA1 | — |
| Series | OptiMOS-T | OptiMOS-T |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 50 A | — |
| Pulsed Drain Current (I_DM) | 200 A | — |
| R_DS(on) max @ V_GS=10V | 15 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 2.5 V (typ) | — |
| Power Dissipation (P_D, T_C=25C) | 100 W | — |
| Paket | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C | -55 °C to +175 °C (junction) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | — | 50 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Maximum R_DS(on) at VGS=10V | — | 15 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Power Dissipation (Ptot) at Tc=25°C | — | 100 W |
| Jumlah Pin | — | 3 (2 + Tab) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Delivery Form | — | Tape and Reel (T&R) |