IPD50N10S3L16ATMA1 vs IPD50N10S3L16ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N10S3L16ATMA1 sa pamamagitan ng Infineon at IPD50N10S3L16ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 - 100V N-Ch 50A OptiMOS MOSFET DPAK | Infineon

IPD50N10S3L16ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPD50N10S3L16ATMA1 —
Series OptiMOS-T OptiMOS-T
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (V_DS) 100 V —
Continuous Drain Current (I_D, T_C=25C) 50 A —
Pulsed Drain Current (I_DM) 200 A —
R_DS(on) max @ V_GS=10V 15 mΩ —
Gate Threshold Voltage (V_GS(th)) 2.5 V (typ) —
Power Dissipation (P_D, T_C=25C) 100 W —
Packhaging PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C -55 °C to +175 °C (junction)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Tindminan RoHS Compliant Compliant
Packaging Tape & Reel —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25°C — 50 A
Pulsed Drain Current (IDM) — 180 A
Maximum R_DS(on) at VGS=10V — 15 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Total Power Dissipation (Ptot) at Tc=25°C — 100 W
Bilang ng Pin — 3 (2 + Tab)
Level ng MSL — 1 (per JEDEC J-STD-020)
Delivery Form — Tape and Reel (T&R)

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