IPD50P04P413ATMA2 vs IPB120P04P4L03ATMA2 Perbandingan

Perbandingan bersamaan detil IPD50P04P413ATMA2 dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD50P04P413ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) —
Drain-Source Voltage (VDS) -40 V 40 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typ/range]
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max]
Maximum Junction Temperature (TJ,max) 175 °C —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TO252-3-313 (DPAK) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Level MSL 1 [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant (per Infineon product page)
Transistor Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Suhu Hubung Kerja — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Jumlah Pin — 3 (Gate, Drain, Source)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon