IPD50P04P413ATMA2 vs IPB120P04P4L03ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50P04P413ATMA2 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50P04P413ATMA2 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) —
Drain-Source Voltage (VDS) -40 V 40 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typ/range]
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max]
Maximum Junction Temperature (TJ,max) 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TO252-3-313 (DPAK) PG-TO263-3-2 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Aras MSL 1 [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant (per Infineon product page)
Transistor Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Suhu Hubungan Operasi — -55C to +175C
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Kiraan Pin — 3 (Gate, Drain, Source)

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