IPD600N25N3GATMA1 vs IPD60R600PFD7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPD600N25N3GATMA1 dari Infineon dan IPD60R600PFD7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD600N25N3GATMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 3 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| Tegangan Batas Gerbang | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount (Tape & Reel) | Surface Mount |
| Technology | OptiMOS 3 trench MOSFET | Superjunction (CoolMOS) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Bebas Halogen | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Series | — | CoolMOS PFD7 |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| Suhu Kerja | — | -55°C to +150°C (Tj) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Reel Quantity | — | 2500 |