IPD600N25N3GATMA1 vs IPD60R600PFD7SAUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD600N25N3GATMA1 disebabkan oleh Infineon dan IPD60R600PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD600N25N3GATMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 3 | — |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| Tegangan Had Kepasaran | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount (Tape & Reel) | Surface Mount |
| Technology | OptiMOS 3 trench MOSFET | Superjunction (CoolMOS) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Boson Bebas | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Series | — | CoolMOS PFD7 |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| Suhu Operasi | — | -55°C to +150°C (Tj) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Reel Quantity | — | 2500 |