IPD600N25N3GATMA1 vs IPD60R600PFD7SAUMA1 比較
詳細並排比較 IPD600N25N3GATMA1 由 Infineon 與 IPD60R600PFD7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ 啟用中規格比較
| 參數 | IPD600N25N3GATMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | OptiMOS 3 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID) at Tc | 25 A | — |
| Power Dissipation (PD) at Tc | 136 W | — |
| On-Resistance RDS(on) max | 60 mOhm at VGS = 10 V | — |
| 閘極臨界電壓 | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| 工作接面溫度 | -55 C to +175 C | — |
| 封裝 | PG-TO252-3 (DPAK), 3-pin (2+Tab), surface mount | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount (Tape & Reel) | Surface Mount |
| Technology | OptiMOS 3 trench MOSFET | Superjunction (CoolMOS) |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| 無鹵素 | Yes, per IEC 61249-2-21 | — |
| JEDEC Qualification | Qualified for target application | — |
| Series | — | CoolMOS PFD7 |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| 工作溫度 | — | -55°C to +150°C (Tj) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | — | Compliant |
| Reel Quantity | — | 2500 |