IPD60R145CFD7ATMA1 vs IPL60R060CFD7AUMA1 Perbandingan

Perbandingan bersamaan detil IPD60R145CFD7ATMA1 dari Infineon dan IPL60R060CFD7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD60R145CFD7ATMA1 IPL60R060CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) —
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Paket TO-252AA (DPAK) surface mount PG-VSON-4-1 (Surface Mount)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Suhu Kerja -55C to +150C (junction) —
Tipe Mounting Surface Mount (DPAK, 3-pin + tab) Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Series CoolMOS CFD7 CoolMOS™ CFD7
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL Level]
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
Rentang Suhu Kerja — -40 °C to +150 °C

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