IPD60R145CFD7ATMA1 vs IPL60R060CFD7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R145CFD7ATMA1 disebabkan oleh Infineon dan IPL60R060CFD7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R145CFD7ATMA1 IPL60R060CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology CoolMOS CFD7 (superjunction) —
Drain-Source Voltage (V<sub>DS</sub>) 600 V —
Continuous Drain Current (I<sub>D</sub>) 16 A (T<sub>C</sub> = 25C) —
On-Resistance R<sub>DS(on)</sub> max 145 mOhm —
Power Dissipation (P<sub>D</sub>) 83 W (T<sub>C</sub> = 25C) —
Gate Threshold Voltage V<sub>GS(th)</sub> [DATA_NEEDED: Vth typical/min/max] —
Kemasan TO-252AA (DPAK) surface mount PG-VSON-4-1 (Surface Mount)
Body Diode Integrated fast body diode (low Q<sub>rr</sub>) —
Suhu Operasi -55C to +150C (junction) —
Jenis Pemasangan Surface Mount (DPAK, 3-pin + tab) Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Series CoolMOS CFD7 CoolMOS™ CFD7
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL Level]
Status RoHS Compliant Compliant
Target Application ZVS / LLC resonant converters, soft switching —
Manufacturer — Infineon Technologies
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
Gambaran Suhu Operasi — -40 °C to +150 °C

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