IPD60R145CFD7ATMA1 vs IPL60R060CFD7AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R145CFD7ATMA1 sa pamamagitan ng Infineon at IPL60R060CFD7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ NakahandaInfineon
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
IPL60R060CFD7AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R145CFD7ATMA1 | IPL60R060CFD7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | CoolMOS CFD7 (superjunction) | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | — |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | — |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | — |
| Packhaging | TO-252AA (DPAK) surface mount | PG-VSON-4-1 (Surface Mount) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | — |
| Temperature na Operasyon | -55C to +150C (junction) | — |
| Uri ng Pagpapasok | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Series | CoolMOS CFD7 | CoolMOS™ CFD7 |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Tindminan RoHS | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | — |
| Manufacturer | — | Infineon Technologies |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Power Dissipation (P_D, Tc) | — | 219 W |
| R_DS(on) (max) at V_GS = 10 V | — | 60 mΩ |
| R_DS(on) (typ, datasheet) | — | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | — | 79 nC |
| Input Capacitance (C_iss) | — | 3193 pF |
| Output Capacitance (C_oss) | — | 62 pF |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | — | 4.5 V |
| Hanay ng Temperature na Operasyon | — | -40 °C to +150 °C |