IPD60R1K0PFD7SAUMA1 vs IPD60R600PFD7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPD60R1K0PFD7SAUMA1 dari Infineon dan IPD60R600PFD7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD60R1K0PFD7SAUMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | CoolMOS PFD7 Superjunction (SJ) MOSFET | Superjunction (CoolMOS) |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC | 4.7 A | — |
| Power Dissipation (PD) at TC | 26 W | — |
| Drain-Source On-Resistance (RDS(on)) | 1 Ω @ VGS=10V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max gate-source) | — |
| Gate Charge (QG) | 6 nC @ VGS=10V | — |
| Output Capacitance (Coss) | 230 pF @ 400 V | — |
| Paket | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Drive Voltage (recommended) | 10 V (full enhancement) | — |
| Status RoHS | Compliant | Compliant |
| Series | CoolMOS PFD7 consumer / superjunction | CoolMOS PFD7 |
| Manufacturer | — | Infineon Technologies |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| Suhu Kerja | — | -55°C to +150°C (Tj) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Reel Quantity | — | 2500 |