IPD60R1K0PFD7SAUMA1 vs IPD60R600PFD7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R1K0PFD7SAUMA1 disebabkan oleh Infineon dan IPD60R600PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60R1K0PFD7SAUMA1 IPD60R600PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS PFD7 Superjunction (SJ) MOSFET Superjunction (CoolMOS)
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC 4.7 A —
Power Dissipation (PD) at TC 26 W —
Drain-Source On-Resistance (RDS(on)) 1 Ω @ VGS=10V —
Gate Threshold Voltage (VGS(th)) ±20 V (max gate-source) —
Gate Charge (QG) 6 nC @ VGS=10V —
Output Capacitance (Coss) 230 pF @ 400 V —
Kemasan PG-TO252-3 (DPAK, 2 leads + tab, SC-63) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (TJ) —
Gate Drive Voltage (recommended) 10 V (full enhancement) —
Status RoHS Compliant Compliant
Series CoolMOS PFD7 consumer / superjunction CoolMOS PFD7
Manufacturer — Infineon Technologies
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D) — 6 A (Tc)
R_DS(on) Max — 600 mΩ @ V_GS = 10 V, I_D = 1.7 A
Total Gate Charge (Q_g) — 8.5 nC
Output Capacitance (C_oss) — 8 pF @ 400 V
Power Dissipation (P_D) — 31 W (Tc)
Gate Threshold Voltage (V_GS(th)) — 3.5 V (typ)
Suhu Operasi — -55°C to +150°C (Tj)
Aras MSL — 1 (per JEDEC J-STD-020)
Reel Quantity — 2500

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