IPD60R600P7ATMA1 vs IPL60R060CFD7AUMA1 Perbandingan

Perbandingan bersamaan detil IPD60R600P7ATMA1 dari Infineon dan IPL60R060CFD7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60R600P7ATMA1 IPL60R060CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD60R600P7ATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS™ CFD7
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (SJ) / CoolMOS —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, TC) 6 A —
On-Resistance (RDS(on)) 490 mOhm (max) —
Power Dissipation (PD, TC) 30 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Rentang Suhu Kerja -55C to +150C (TJ) -40 °C to +150 °C
Paket / Case PG-TO252-3 (DPAK), surface mount —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
Status RoHS Compliant Compliant
Generation CoolMOS 7th generation (P7, successor to P6) —
Ordering Code Suffix ATMA1 = Tape & Reel, 13-inch —
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
Paket — PG-VSON-4-1 (Surface Mount)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon