IPD60R600P7ATMA1 vs IPL60R060CFD7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R600P7ATMA1 disebabkan oleh Infineon dan IPL60R060CFD7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60R600P7ATMA1 IPL60R060CFD7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD60R600P7ATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS™ CFD7
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology Superjunction (SJ) / CoolMOS —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, TC) 6 A —
On-Resistance (RDS(on)) 490 mOhm (max) —
Power Dissipation (PD, TC) 30 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Gambaran Suhu Operasi -55C to +150C (TJ) -40 °C to +150 °C
Kemasan / Case PG-TO252-3 (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL Level]
Status RoHS Compliant Compliant
Generation CoolMOS 7th generation (P7, successor to P6) —
Ordering Code Suffix ATMA1 = Tape & Reel, 13-inch —
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, Tc) — 40 A
Power Dissipation (P_D, Tc) — 219 W
R_DS(on) (max) at V_GS = 10 V — 60 mΩ
R_DS(on) (typ, datasheet) — 48 mΩ
Gate Charge (Q_G, typ) at V_GS = 10 V — 79 nC
Input Capacitance (C_iss) — 3193 pF
Output Capacitance (C_oss) — 62 pF
Gate-Source Voltage (V_GS) — ±20 V (max)
Gate Threshold Voltage (V_GS(th), typ) — 4.5 V
Kemasan — PG-VSON-4-1 (Surface Mount)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga