IPD70N10S312ATMA1 vs IPD60R280P7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPD70N10S312ATMA1 dari Infineon dan IPD60R280P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD70N10S312ATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IPD70N10S312ATMA1 | — |
| Product Family | OptiMOS-T Power-Transistor | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 600 V |
| Continuous Drain Current (ID, Tc) | 70 A | 12 A |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | 4 V max @ ID = 190 µA |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | — |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Paket | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (up to 260 °C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Technology | — | CoolMOS P7 Superjunction (SJ) N-channel |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Status RoHS | — | Compliant |
| Integrated ESD Protection | — | Yes |