IPD70N10S312ATMA1 vs IPD60R280P7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S312ATMA1 sa pamamagitan ng Infineon at IPD60R280P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD70N10S312ATMA1 IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 - 100V 70A N-Channel MOSFET | TXF | TO-252

IPD70N10S312ATMA1 ✓ Nakahanda
Infineon
IPD60R280P7SAUMA1 IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 - 600V 280mΩ CoolMOS P7 MOSFET | Infineon

IPD60R280P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70N10S312ATMA1 IPD60R280P7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IPD70N10S312ATMA1 —
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 600 V
Continuous Drain Current (ID, Tc) 70 A 12 A
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] 4 V max @ ID = 190 µA
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Packhaging PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (up to 260 °C peak reflow) 1
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Static Drain-Source On-Resistance (RDS(on)) — 280 mΩ (typical)
Gate-Source Voltage (VGS) Max — ±20 V
Total Power Dissipation (Ptot, Tc) — 53 W
Operating Junction Temperature (TJ) — -40 °C to +150 °C
Technology — CoolMOS P7 Superjunction (SJ) N-channel
Series — CoolMOS P7 (7th generation, 600 V)
Tindminan RoHS — Compliant
Integrated ESD Protection — Yes

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita