IPD80R1K4P7ATMA1 vs IPD60R145CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPD80R1K4P7ATMA1 dari Infineon dan IPD60R145CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD80R1K4P7ATMA1 IPD60R145CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 CoolMOS CFD7
Technology N-Channel Superjunction CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max —
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) —
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Dissipasi Listrik (Ptot) 32 W —
Suhu Hubung Kerja -55C to +150C —
Paket PG-TO252-2 (DPAK) TO-252AA (DPAK) surface mount
Tipe Mounting Surface Mount Surface Mount (DPAK, 3-pin + tab)
Jumlah Pin 3 (Gate, Drain/Tab, Source) 3 (Gate, Drain, Source)
Status RoHS Compliant Compliant
REACH Status Compliant —
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes —
Body Diode Integrated, fast recovery Integrated fast body diode (low Q<sub>rr</sub>)
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Suhu Kerja — -55C to +150C (junction)
Target Application — ZVS / LLC resonant converters, soft switching

Spek dan Sumber

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