IPD80R1K4P7ATMA1 vs IPD60R145CFD7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R1K4P7ATMA1 disebabkan oleh Infineon dan IPD60R145CFD7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD80R1K4P7ATMA1 IPD60R145CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS P7 CoolMOS CFD7
Technology N-Channel Superjunction CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max —
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) —
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Pembuangan Kuasa (Ptot) 32 W —
Suhu Hubungan Operasi -55C to +150C —
Kemasan PG-TO252-2 (DPAK) TO-252AA (DPAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount (DPAK, 3-pin + tab)
Kiraan Pin 3 (Gate, Drain/Tab, Source) 3 (Gate, Drain, Source)
Status RoHS Compliant Compliant
REACH Status Compliant —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes —
Body Diode Integrated, fast recovery Integrated fast body diode (low Q<sub>rr</sub>)
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Suhu Operasi — -55C to +150C (junction)
Target Application — ZVS / LLC resonant converters, soft switching

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga