IPD80R1K4P7ATMA1 vs IPD60R145CFD7ATMA1 比較
詳細並排比較 IPD80R1K4P7ATMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ 啟用中規格比較
| 參數 | IPD80R1K4P7ATMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | CoolMOS CFD7 |
| Technology | N-Channel Superjunction | CoolMOS CFD7 (superjunction) |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| 功率耗散 (Ptot) | 32 W | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 | PG-TO252-2 (DPAK) | TO-252AA (DPAK) surface mount |
| 安裝類型 | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| 腳位數 | 3 (Gate, Drain/Tab, Source) | 3 (Gate, Drain, Source) |
| RoHS 狀態 | Compliant | Compliant |
| REACH Status | Compliant | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes | — |
| Body Diode | Integrated, fast recovery | Integrated fast body diode (low Q<sub>rr</sub>) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| 工作溫度 | — | -55C to +150C (junction) |
| Target Application | — | ZVS / LLC resonant converters, soft switching |