IPD80R280P7ATMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPD80R280P7ATMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD80R280P7ATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 CoolMOS CFD7
Tipe Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS P7) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS) 800 V —
Continuous Drain Current (I_D, Tc) 17 A —
R_DS(on) max at V_GS=10V 280 mOhm —
Power Dissipation (P_D, Tc) 101 W —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
Paket PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55C to +150C —
ESD Protection Integrated (per datasheet) —
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Level MSL [DATA_NEEDED: MSL rating] 1
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Rentang Suhu Kerja — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

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