IPD80R280P7ATMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPD80R280P7ATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPD80R280P7ATMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $5.19
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 CoolMOS CFD7
Transistor Type N-Channel MOSFET β€”
Technology Superjunction (CoolMOS P7) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS) 800 V β€”
Continuous Drain Current (I_D, Tc) 17 A β€”
R_DS(on) max at V_GS=10V 280 mOhm β€”
Power Dissipation (P_D, Tc) 101 W β€”
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] β€”
Package PG-TO252-3 (DPAK) PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55C to +150C β€”
ESD Protection Integrated (per datasheet) β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level [DATA_NEEDED: MSL rating] 1
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 40 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 4 V
Total Gate Charge Qg typ β€” [DATA_NEEDED: Qg]
Power Dissipation (Tc=25Β°C) β€” 227 W
Operating Temperature Range β€” -55Β°C to +150Β°C
Integrated Body Diode β€” Yes - ultra-fast CoolMOS CFD7 diode
Target Applications β€” Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

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