IPD80R280P7ATMA1 vs IPB60R040CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R280P7ATMA1 sa pamamagitan ng Infineon at IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD80R280P7ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | CoolMOS CFD7 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Pwersang Pinahihigpit (TC=25°C) | — | 227 W |
| Hanay ng Temperature na Operasyon | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |