IPD80R280P7ATMA1 vs IPB60R040CFD7ATMA1 比較
詳細並排比較 IPD80R280P7ATMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD80R280P7ATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | CoolMOS CFD7 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 800 V | — |
| Continuous Drain Current (I_D, Tc) | 17 A | — |
| R_DS(on) max at V_GS=10V | 280 mOhm | — |
| Power Dissipation (P_D, Tc) | 101 W | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55C to +150C | — |
| ESD Protection | Integrated (per datasheet) | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功率耗散 (TC=25°C) | — | 227 W |
| 工作溫度範圍 | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |