IPG20N04S4L08ATMA1 vs IPG20N04S4L11ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L08ATMA1 dari Infineon dan IPG20N04S4L11ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L08ATMA1 IPG20N04S4L11ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Suhu Kerja -55°C to +175°C —
Paket / Case PG-TDSON-8-4 (TDSON-8) —
Tipe Mounting Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
Level MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (260C peak reflow)
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Rentang Suhu Kerja — -55C to +175C
Paket — PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Avalanche Rating — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Qualified
Status RoHS — Compliant (Green Product)
Technology — OptiMOS-T2 trench

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