IPG20N04S4L08ATMA1 vs IPG20N04S4L11ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L08ATMA1 disebabkan oleh Infineon dan IPG20N04S4L11ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG20N04S4L08ATMA1 IPG20N04S4L11ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Suhu Operasi -55°C to +175°C —
Kemasan / Case PG-TDSON-8-4 (TDSON-8) —
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
Aras MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (260C peak reflow)
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Gambaran Suhu Operasi — -55C to +175C
Kemasan — PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Avalanche Rating — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Qualified
Status RoHS — Compliant (Green Product)
Technology — OptiMOS-T2 trench

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