IPG20N04S4L08ATMA1 vs IPG20N04S4L11ATMA1 Comparison

Detailed side-by-side comparison of IPG20N04S4L08ATMA1 by Infineon and IPG20N04S4L11ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPG20N04S4L08ATMA1 IPG20N04S4L11ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Operating Temperature -55°C to +175°C —
Package / Case PG-TDSON-8-4 (TDSON-8) —
Mounting Type Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
MSL Level MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) 1 (260C peak reflow)
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ 25C — 20 A per channel
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A — 11.6 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Power Dissipation (PD) — 41 W
Operating Temperature Range — -55C to +175C
Package — PG-TDSON-8-4 (Super S08 / 8-TDSON EP)
Avalanche Rating — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Qualified
RoHS Status — Compliant (Green Product)
Technology — OptiMOS-T2 trench

Datasheets & Resources

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