IPL60R105P7AUMA1 vs IGT65R025D2ATMA1 Perbandingan
Perbandingan bersamaan detil IPL60R105P7AUMA1 dari Infineon dan IGT65R025D2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPL60R105P7AUMA1 | IGT65R025D2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C (junction, typical) |
| Paket | PG-VSON-4 (4-pin SMD with exposed pad) | PG-HSOF-8 (source-down, bottom-cooled) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Lead-Free | Yes | — |
| Product Family | — | CoolGaN Gen2 (G5) |
| Tipe Transistor | — | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id, Tc) | — | 70 A |
| Power Dissipation (Pd, Tc) | — | 236 W |
| On-State Resistance (Rds(on)) | — | 25 mΩ (typical, per MPN suffix) |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss typical value] |
| Reverse Recovery Charge (Qrr) | — | Near-zero (GaN characteristic) |