IPL60R105P7AUMA1 vs IGT65R025D2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R105P7AUMA1 sa pamamagitan ng Infineon at IGT65R025D2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R105P7AUMA1 | IGT65R025D2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C (junction, typical) |
| Packhaging | PG-VSON-4 (4-pin SMD with exposed pad) | PG-HSOF-8 (source-down, bottom-cooled) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| Product Family | — | CoolGaN Gen2 (G5) |
| Uri ng Transistor | — | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id, Tc) | — | 70 A |
| Power Dissipation (Pd, Tc) | — | 236 W |
| On-State Resistance (Rds(on)) | — | 25 mΩ (typical, per MPN suffix) |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss typical value] |
| Reverse Recovery Charge (Qrr) | — | Near-zero (GaN characteristic) |