IPL60R180P6AUMA1 vs IPL60R210P6AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R180P6AUMA1 dari Infineon dan IPL60R210P6AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R180P6AUMA1 IPL60R210P6AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS P6 (Superjunction N-channel MOSFET) MOSFET (Superjunction / CoolMOS™)
Drain-Source Voltage (VDS) 600 V —
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Rentang Suhu Hubung Kerja -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Paket PG-VSON-4 (Thin-PAK) surface mount PG-VSON-4 (ThinPAK) Surface Mount
Tipe Mounting Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — IPL60R210P6AUMA1
Series — CoolMOS™ P6
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 600 V
Continuous Drain Current (Id) @ Tc=25°C — 19.2 A
On-Resistance (RDS(on)) max — 210 mΩ
Power Dissipation (Pd) @ Tc=25°C — 151 W
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Rentang Suhu Kerja — [DATA_NEEDED: Tj max / operating range]
Level MSL — [DATA_NEEDED: MSL rating]
Packaging — Tape & Reel
Packing Quantity — [DATA_NEEDED: reel qty]

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon