IPL60R180P6AUMA1 vs IPL60R210P6AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R180P6AUMA1 disebabkan oleh Infineon dan IPL60R210P6AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R180P6AUMA1 IPL60R210P6AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS P6 (Superjunction N-channel MOSFET) MOSFET (Superjunction / CoolMOS™)
Drain-Source Voltage (VDS) 600 V —
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Gambaran Suhu Hubungan Operasi -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) —
Kemasan PG-VSON-4 (Thin-PAK) surface mount PG-VSON-4 (ThinPAK) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — IPL60R210P6AUMA1
Series — CoolMOS™ P6
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 600 V
Continuous Drain Current (Id) @ Tc=25°C — 19.2 A
On-Resistance (RDS(on)) max — 210 mΩ
Power Dissipation (Pd) @ Tc=25°C — 151 W
Gate-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical]
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max / operating range]
Aras MSL — [DATA_NEEDED: MSL rating]
Packaging — Tape & Reel
Packing Quantity — [DATA_NEEDED: reel qty]

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