IPN80R4K5P7ATMA1 vs IPN70R1K4P7SATMA1 Perbandingan

Perbandingan bersamaan detil IPN80R4K5P7ATMA1 dari Infineon dan IPN70R1K4P7SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPN80R4K5P7ATMA1 IPN70R1K4P7SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
Paket PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223 (3-pin + tab, surface mount)
Tipe Mounting Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) Superjunction (CoolMOS P7)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
Status RoHS Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Product Series — CoolMOS P7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (PD) at TC — 6.2 W
Rentang Suhu Kerja — -55C to +150C (TJ)
Configuration — Single with built-in diode
Jumlah Pin — 3 (Gate, Drain, Source)
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)
Level MSL — 1 (per JEDEC J-STD-020)

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