IPN80R4K5P7ATMA1 vs IPN70R1K4P7SATMA1 比較

詳細並排比較 IPN80R4K5P7ATMA1 由 Infineon 與 IPN70R1K4P7SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ 啟用中

規格比較

參數 IPN80R4K5P7ATMA1 IPN70R1K4P7SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
封裝 PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223 (3-pin + tab, surface mount)
安裝類型 Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) Superjunction (CoolMOS P7)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
RoHS 狀態 Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Product Series — CoolMOS P7
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (PD) at TC — 6.2 W
工作溫度範圍 — -55C to +150C (TJ)
Configuration — Single with built-in diode
腳位數 — 3 (Gate, Drain, Source)
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

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