IPN80R4K5P7ATMA1 vs IPN70R1K4P7SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN80R4K5P7ATMA1 disebabkan oleh Infineon dan IPN70R1K4P7SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPN80R4K5P7ATMA1 IPN70R1K4P7SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 800 V —
Continuous Drain Current (ID, Tc) 1.5 A —
Power Dissipation (Pd, Tc) 6 W —
On-Resistance (RDS(on), VGS=10V) 4.5 ohm max —
Kemasan PG-SOT223 (surface mount, 3-pin + tab) PG-SOT223 (3-pin + tab, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Technology CoolMOS Superjunction (SJ) Superjunction (CoolMOS P7)
Operating Mode Enhancement-mode —
Grade Industrial —
Application Low-power SMPS, flyback converters, LED drivers —
Status RoHS Compliant Compliant
Reel / Tape Packaging Tape & Reel (T/R) —
Product Series — CoolMOS P7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (PD) at TC — 6.2 W
Gambaran Suhu Operasi — -55C to +150C (TJ)
Configuration — Single with built-in diode
Kiraan Pin — 3 (Gate, Drain, Source)
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)
Aras MSL — 1 (per JEDEC J-STD-020)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga