IPP045N10N3GXKSA1 vs IPP037N08N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IPP045N10N3GXKSA1 dari Infineon dan IPP037N08N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP045N10N3GXKSA1 IPP037N08N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPP045N10N3GXKSA1 —
Technology OptiMOS 3 MOSFET (Metal Oxide) - OptiMOS™ 3
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C 100 A —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C [DATA_NEEDED: I_D at TC=100C] —
Pulsed Drain Current (I<sub>D,pulse</sub>) 137 A —
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V 4.5 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 3.5 V (typical, per LCSC listing) —
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C 214 W —
Paket TO-220-3 (PG-TO220-3) through-hole PG-TO220-3 (Through Hole)
Rentang Suhu Kerja -55 °C to +175 °C (junction, typical MOSFET limit) -55°C to +175°C (junction)
Tipe Mounting Through Hole Through Hole
Status RoHS Compliant (per LCSC datasheet excerpt) Compliant
Lead-Free Yes (Infineon G/GX part suffix) —
Level MSL N/A (through-hole package) —
FET Type — N-Channel
Drain to Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 100 A
RDS(on) Max @ VGS=10V — 3.75 mΩ
Drive Voltage (Max RDS(on), Min RDS(on)) — 6 V, 10 V
Power Dissipation (Pd) @ Tc=25°C — 214 W
Jumlah Pin — 3
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ @ VGS=10V]
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]

Spek dan Sumber

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