IPP045N10N3GXKSA1 vs IPP037N08N3GXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP045N10N3GXKSA1 disebabkan oleh Infineon dan IPP037N08N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP045N10N3GXKSA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPP045N10N3GXKSA1 | — |
| Technology | OptiMOS 3 | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A | — |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) | — |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W | — |
| Kemasan | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (Through Hole) |
| Gambaran Suhu Operasi | -55 °C to +175 °C (junction, typical MOSFET limit) | -55°C to +175°C (junction) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant (per LCSC datasheet excerpt) | Compliant |
| Lead-Free | Yes (Infineon G/GX part suffix) | — |
| Aras MSL | N/A (through-hole package) | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | — | 214 W |
| Kiraan Pin | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |