IPP045N10N3GXKSA1 vs IPP037N08N3GXKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP045N10N3GXKSA1 sa pamamagitan ng Infineon at IPP037N08N3GXKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ NakahandaInfineon
IPP037N08N3GXKSA1 - 80V 100A 3.7mΩ OptiMOS 3 MOSFET | Infineon
IPP037N08N3GXKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP045N10N3GXKSA1 | IPP037N08N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPP045N10N3GXKSA1 | — |
| Technology | OptiMOS 3 | MOSFET (Metal Oxide) - OptiMOS™ 3 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | 100 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | [DATA_NEEDED: I_D at TC=100C] | — |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | 137 A | — |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | 4.5 mΩ | — |
| Gate Threshold Voltage V<sub>GS(th)</sub> | 3.5 V (typical, per LCSC listing) | — |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | 214 W | — |
| Packhaging | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (Through Hole) |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (junction, typical MOSFET limit) | -55°C to +175°C (junction) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Tindminan RoHS | Compliant (per LCSC datasheet excerpt) | Compliant |
| Lead-Free | Yes (Infineon G/GX part suffix) | — |
| Level ng MSL | N/A (through-hole package) | — |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 80 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 3.75 mΩ |
| Drive Voltage (Max RDS(on), Min RDS(on)) | — | 6 V, 10 V |
| Power Dissipation (Pd) @ Tc=25°C | — | 214 W |
| Bilang ng Pin | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |