IPP100N12S305AKSA1 vs IPB027N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPP100N12S305AKSA1 dari Infineon dan IPB027N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP100N12S305AKSA1 IPB027N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS trench OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Arus Kedip Pengecor [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V ±20 V
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket TO-220 (PG-TO220-3-1) PG-TO263-3 (D2PAK)
Tipe Mounting Through Hole Surface Mount
Jumlah Pin 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 120 A
Power Dissipation (PD) at TC=25°C — 300 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mΩ
On-Resistance RDS(on) typical at VGS=10V — 2.7 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and min/max VGS(th) values]
Rentang Suhu Kerja — -55°C to +175°C (TJ)
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: exact °C/W value]
Single Pulse Avalanche Energy (EAS) — [DATA_NEEDED: datasheet EAS figure]
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: moisture sensitivity level]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg at VGS=10V]

Spek dan Sumber

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