IPP100N12S305AKSA1 vs IPB027N10N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP100N12S305AKSA1 sa pamamagitan ng Infineon at IPB027N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPP100N12S305AKSA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS trench | OptiMOS 3 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 120 V | 100 V |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Kuru-kuryente | [DATA_NEEDED: pulsed ID value] | — |
| Maximum Power Dissipation (Ptot) at Tc | 300 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Avalanche Energy, Single Pulse | [DATA_NEEDED: EAS] | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | TO-220 (PG-TO220-3-1) | PG-TO263-3 (D2PAK) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Bilang ng Pin | 3 | — |
| MSL Moisture Sensitivity Level | 1 (260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Tested | 100% tested | — |
| RoHS Compliance | Compliant (Green product) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C (TJ) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Tindminan RoHS | — | Compliant |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |