IPP100N12S305AKSA1 vs IPB027N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP100N12S305AKSA1 disebabkan oleh Infineon dan IPB027N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP100N12S305AKSA1 IPB027N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS trench OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Tc 100 A —
Arus Alir Gesa [DATA_NEEDED: pulsed ID value] —
Maximum Power Dissipation (Ptot) at Tc 300 W —
Gate-Source Voltage (VGS) max ±20 V ±20 V
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan TO-220 (PG-TO220-3-1) PG-TO263-3 (D2PAK)
Jenis Pemasangan Through Hole Surface Mount
Kiraan Pin 3 —
MSL Moisture Sensitivity Level 1 (260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% tested —
RoHS Compliance Compliant (Green product) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25°C — 120 A
Power Dissipation (PD) at TC=25°C — 300 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mΩ
On-Resistance RDS(on) typical at VGS=10V — 2.7 mΩ
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and min/max VGS(th) values]
Gambaran Suhu Operasi — -55°C to +175°C (TJ)
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: exact °C/W value]
Single Pulse Avalanche Energy (EAS) — [DATA_NEEDED: datasheet EAS figure]
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: moisture sensitivity level]
Total Gate Charge (Qg) — [DATA_NEEDED: typical Qg at VGS=10V]

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