IPP100N12S305AKSA2 vs IPP100N12S305AKSA1 Perbandingan

Perbandingan bersamaan detil IPP100N12S305AKSA2 dari Infineon dan IPP100N12S305AKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP100N12S305AKSA2 IPP100N12S305AKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 120 V 120 V
Continuous Drain Current (ID, TC=25C) 100 A —
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, TC=25C) 300 W —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] —
Total Gate Charge Qg [DATA_NEEDED: Qg value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Rentang Suhu Kerja -55C to +175C (TJ) —
Paket PG-TO220-3-1 (Through Hole) TO-220 (PG-TO220-3-1)
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 (Gate, Drain, Source) 3
Status RoHS Compliant —
Level MSL N/A (Through Hole) —
Avalanche Energy Rated Yes (single-pulse) —
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS trench
Continuous Drain Current (ID) at Tc — 100 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
Suhu Hubung Kerja — -55 °C to +175 °C
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

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