IPP100N12S305AKSA2 vs IPP100N12S305AKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP100N12S305AKSA2 sa pamamagitan ng Infineon at IPP100N12S305AKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ NakahandaInfineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP100N12S305AKSA2 | IPP100N12S305AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 120 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | — |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (TJ) | — |
| Packhaging | PG-TO220-3-1 (Through Hole) | TO-220 (PG-TO220-3-1) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Bilang ng Pin | 3 (Gate, Drain, Source) | 3 |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | N/A (Through Hole) | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS trench |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Pulsed Drain Kuru-kuryente | — | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | — | 300 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | — | [DATA_NEEDED: EAS] |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| MSL Moisture Sensitivity Level | — | 1 (260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% tested |
| RoHS Compliance | — | Compliant (Green product) |