IPP60R190P6XKSA1 vs IPP60R180P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPP60R190P6XKSA1 dari Infineon dan IPP60R180P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPP60R190P6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS P7 (Superjunction N-Channel) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Paket | PG-TO220-3 (through-hole) | PG-TO220-3 (through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 °C to +150 °C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level MSL | Not applicable (through-hole) | N/A (through-hole) |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |