IPP60R190P6XKSA1 vs IPP60R180P7XKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP60R190P6XKSA1 disebabkan oleh Infineon dan IPP60R180P7XKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPP60R190P6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | — |
| Technology | Superjunction (SJ) MOSFET | CoolMOS P7 (Superjunction N-Channel) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | — |
| On-Resistance RDS(on) max at 25C | 190 mOhm | — |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | — |
| Kemasan | PG-TO220-3 (through-hole) | PG-TO220-3 (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | — |
| Gambaran Suhu Operasi | -55C to +150C (junction) | -55 °C to +150 °C |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Aras MSL | Not applicable (through-hole) | N/A (through-hole) |
| Product Variant | XKSA1 (industrial grade, tube pack) | — |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| Bilangan Pin | — | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | — | Yes |